The Kinetics of Chemical Vapor Deposition of Tantalum

Zhang Zhangxin

doi:10.13374/j.issn1001-053x.1983.04.011

Volume 5 Issue 4

Nov. 2021

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Zhang Zhangxin. The Kinetics of Chemical Vapor Deposition of Tantalum[J]. Chinese Journal of Engineering, 1983, 5(4): 106-111. doi: 10.13374/j.issn1001-053x.1983.04.011

Citation:

Zhang Zhangxin. The Kinetics of Chemical Vapor Deposition of Tantalum[J]. Chinese Journal of Engineering, 1983, 5(4): 106-111. doi: 10.13374/j.issn1001-053x.1983.04.011

Zhang Zhangxin. The Kinetics of Chemical Vapor Deposition of Tantalum[J]. Chinese Journal of Engineering, 1983, 5(4): 106-111. doi: 10.13374/j.issn1001-053x.1983.04.011

Citation:

Zhang Zhangxin. The Kinetics of Chemical Vapor Deposition of Tantalum[J]. Chinese Journal of Engineering, 1983, 5(4): 106-111. doi: 10.13374/j.issn1001-053x.1983.04.011

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The Kinetics of Chemical Vapor Deposition of Tantalum

doi: 10.13374/j.issn1001-053x.1983.04.011

Zhang Zhangxin

Available Online: 2021-11-15

Abstract

Abstract

Using the theory of absolute reacte rate and statistation mechanics for Chemical vapor deposition (CVD) of tantalum has been Constructed model of Chemical reaction.Experement presented, the agreement between measured and Calculabd data is good The fact seems to prove, rate model which using the absolute reacte rate obtained is correct and the rate-limiting step is the surfacl chemical reaction for Chemical Vapor deposition